YORKTOWN HEIGHTS, N.Y.-IBM Corp. said it has demonstrated what it describes as the world’s first silicon germanium transistor that can improve performance four times and reduce power consumption five times more than what is currently available in wireless devices.
“As the wireless industry continues to grow, device manufacturers also need better mixed-signal chips that support computing applications as well as high-frequency communications applications,” said IBM. “This new chip design uses a revolutionary wafer thin enough to maximize the performance of both the computing and communications components.”
