Toshiba and SanDisk Celebrate the Opening of Fab 5 300mm NAND Flash Memory Fabrication Facility in Japan

Toshiba | July 12, 2011 | Press Release
Yokkaichi, Mie, Japan, July 12, 2011 — Toshiba Corporation (TOKYO: 6502) and SanDisk Corporation (NASDAQ: SNDK) today celebrated the opening of Fab 5, the third 300mm wafer NAND fabrication facility at Toshiba’s Yokkaichi Operations in Mie Prefecture, Japan.
Consumer demand for smartphones, tablets and other electronic devices continues to fuel strong global demand for NAND flash memory. Toshiba began the construction of Fab 5 in July 2010, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011. Fab 5 currently uses 24 nanometer (nm)* process technology and its first wafer outs will be in August. In time, the fab will transition to more advanced process generations, starting with recently announced 19nm technology, the world’s smallest, most advanced process node.
Fab 5 incorporates advanced earthquake-absorbing structures and integrates multiple power compensation techniques for protection against unexpected disruptions. LED lighting and power-saving manufacturing equipment will support the fab in securing Toshiba’s goal of 12 percent less CO₂ emissions than Fab 4. A wafer transportation system links the facility with Fabs 3 and 4 to support efficient manufacturing.
Flash Forward, Ltd., a joint venture between Toshiba and SanDisk established in September 2010 (50.1 percent owned by Toshiba and 49.9 percent by SanDisk), funded the advanced manufacturing equipment within the fab.
Press release via Toshiba